AM2370N these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) ( ? )i d (a) 0.280 @ v gs = 10 v 1.8 0.355 @ v gs = 5.5v 1.6 product summary 100 ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-23 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol maximum units v ds 100 v gs 20 continuous drain current a t a =25 o c i d 1.8 i dm 10 i s 1.1 a power dissipation a t a =25 o c p d 1.30 w t j , t stg -55 to 150 o c operating junction and storage temperature range continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherw ise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage a symbol typ max t <= 10 sec 93 110 steady state 130 150 thermal resistance ratings maximum junction-to-ambient a o c/w r thja parameter d s g product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max ga t e - t h r e s h o l d vo l t a g e v gs(th) v ds = v gs , i d = 250 ua 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = 80 v, v gs = 0 v 1 v ds = 80 v, v gs = 0 v, t j = 55 o c 10 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 10 a v gs = 10 v, i d = 1.8 a 280 v gs = 5.5 v, i d = 1.6 a 355 forward tranconductance a g fs v ds = 10 v, i d = 1.8 a 11.3 s diode forward voltage v sd i s = 1.6 a, v gs = 0 v 0.75 v total gate charge q g 7.0 gate-source charge q gs 1.1 ga t e - dr a i n ch a r g e q gd 2.0 turn-on delay time t d(on) 8 ris e time t r 24 turn-off delay time t d(off) 35 fall-time t f 10 m ? parame te r limits unit v dd = 10 v, r l = 15 ? , i d = 1 a, v gen = 4.5 v v ds = 10 v, v gs = 5.5 v, i d = 1.8 a nc ns dynamic b specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static te s t conditions symbol drain-source on-resistance a r ds(on) AM2370N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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